Comparative Analysis of VO2Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol–Gel Process-Reference-Cited by-同舟云学术

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Comparative Analysis of VO2Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol–Gel Process

Published:2007-02-08 Issue:2 Volume:46 Page:738-743
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chae Byung-Gyu,Kim Hyun-Tak,Yun Sun-Jin,Kim Bong-Jun,Lee Yong-Wook,Kang Kwang-Yong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Metal-insulator transition in vanadium dioxide

3. Structural Aspects of the Metal-Insulator Transitions in Cr-Doped VO2

4. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

5. Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

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1. Thermochromic Vanadium Dioxide Nanostructures for Smart Windows and Radiative Cooling;Chemistry – A European Journal;2024-07-12

2. Film morphology and substrate strain contributions to ramp reversal memory in VO2;Physical Review Materials;2024-01-09

3. Structural morphology and electrical transitions of V2O3 thin films grown on SiO2/Si by high power impulse magnetron sputtering;Thin Solid Films;2022-01

4. Investigation of fabrication conditions for VO 2 thin films by MOD using carbon thermal reduction;Electronics and Communications in Japan;2021-03-07

5. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives;Nanomaterials;2021-01-28

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