Effect of Resolution Enhancement Techniques on Aberration Sensitivities of ArF Immersion Lithography at 45 nm Node
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Full field analysis of lithography performance for ArF immersion lithography
2. The impact of mask errors on the critical dimensions of butting feature on 65nm node
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5. Optimal lens assignment through measured aberrations
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1. Polarization aberration compensation method by adjusting illumination partial coherent factors in immersion lithography;SPIE Proceedings;2014-11-13
2. A method for compensating the polarization aberration of projection optics in immersion lithography;SPIE Proceedings;2014-08-21
3. Near-Field Optical Litography;Scanning Probe Microscopy in Nanoscience and Nanotechnology;2009-12-04
4. Study of Measurement Condition Optimization in Critical Dimension-Scanning Electron Microscope;Japanese Journal of Applied Physics;2008-08-08
5. Option of resolution enhancement technology in advanced lithography;SPIE Proceedings;2007-12-03
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