Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors-Reference-Cited by-同舟云学术

Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors

Published:2007-05-08 Issue:5A Volume:46 Page:2968-2972
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Omura Yasuhisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. A lateral, unidirectional, bipolar‐type insulated‐gate transistor—A novel semiconductor device

2. Sub-circuit models of silicon-on-insulator insulated-gate pn-junction devices for electrostatic discharge protection circuit design and their applications

3. Two-dimensionally confined injection phenomena at low temperatures in sub-10-nm-thick SOI insulated-gate p-n-junction devices

4. Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)

5. Distinct two-dimensional carrier injection phenomena in extremely thin-SOI insulated-gate pn-junction devices: prospect of new device applications

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