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Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

  • Published:2007-11-06 Issue:11 Volume:46 Page:7225-7231
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoon Sung-Min,Choi Kyu-Jeong,Lee Nam-Yeal,Lee Seung-Yun,Park Young-Sam,Yu Byoung-Gon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials;Applied Physics Letters;2023-06-19

2. Electrical Resistivities of Ge–Sb–Te Alloys;Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory;2020

3. Introduction;Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory;2020

4. Electronic structure and conductivity of off-stoichiometric and Si-doped Ge2Sb2Te5 crystals from multiple-scattering theory;Physical Review B;2019-06-12

5. Improvement in cyclic operation of unit pixel device using Sb-excess Ge2Sb2Te5 thin films for hologram image implementation;Japanese Journal of Applied Physics;2018-07-09
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