Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55 µm
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=6/a=061102/pdf
Reference22 articles.
1. 1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain
2. Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure
3. 1.55 µm spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers
4. Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure
5. Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate
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1. High-resolution X-ray diffraction to probe quantum dot asymmetry;Measurement;2023-11
2. The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system;Journal of Applied Physics;2014-06-07
3. Optical Properties of Quantum Dashes;Solid State Phenomena;2014-03
4. Height-driven linear polarization of the surface emission from quantum dashes;Semiconductor Science and Technology;2012-08-28
5. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films;Journal of Applied Physics;2010-09-15
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