Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm-Reference-Cited by-同舟云学术

Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

Published:2003-12-10 Issue:Part 1, No. 12 Volume:42 Page:7276-7283
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Onuma Takeyoshi,Chichibu Shigefusa F.,Aoyama Toyomi,Nakajima Kiyomi,Ahmet Parhat,Azuhata Takashi,Chikyow Toyohiro,Sota Takayuki,Nagahama Shin-ichi,Mukai Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=12R/a=7276/pdf

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