Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N-Reference-Cited by-同舟云学术

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Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N

Published:2003-11 Issue:Part 2, No. 11B Volume:42 Page:L1362-L1365
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nikishin Sergey A.,Kuryatkov Vladimir V.,Chandolu Anilkumar,Borisov Boris A.,Kipshidze Gela D.,Ahmad Iftikhor,Holtz Mark,Temkin Henryk

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=11B/a=L1362/pdf

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates;Applied Physics Letters;2023-07-31

2. Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities;Nanomaterials;2022-12-31

3. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength;Journal of Materials Research;2021-12-14

4. Gas Detection Using Portable Deep-UV Absorption Spectrophotometry: A Review;Sensors;2019-11-28

5. Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;physica status solidi (a);2019-01-15

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