Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress-Reference-Cited by-同舟云学术

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Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Published:2003-02-15 Issue:Part 1, No. 2A Volume:42 Page:409-413
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shih-hui,Gong Jeng,Wu Meng-chyi,Huang Tsung-yi,Huang Jei-feng,Liou Ruey-hsin,Hsu Shun-liang,Lee Li-ling,Lee Hung-chun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=2R/a=409/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-stage hot-carrier degradation behavior of 0.18μm 18V n-type DEMOS and its recovery effect;Microelectronics Reliability;2009-01

2. Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors;Japanese Journal of Applied Physics;2008-04-25

3. Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2007-04-24

4. Anomalous Reduction of Hot-Carrier-Induced On-Resistance Degradation in n-Type DEMOS Transistors;IEEE Transactions on Device and Materials Reliability;2006-09

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