Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures-Reference-Cited by-同舟云学术

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Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures

Published:2003-07-15 Issue:Part 1, No. 7A Volume:42 Page:4257-4260
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furuta Mamoru,Uraoka Yukiharu,Fuyuki Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=7R/a=4257/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Al/a-Si:H/SiO₂/n-Si/Al based bottom gate thin film transistor using RPCVD SiO₂ and PECVD a-Si:H thin films: probably needed focus for bio-sensing application;Ferroelectrics;2023-08-31

2. Annealing Temperature Effect on Bismuth Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films;Silicon;2021-03-04

3. P‐7: Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process.;SID Symposium Digest of Technical Papers;2019-05-29

4. A Novel Design of Quasi-Lightly Doped Drain Poly-Si Thin-Film Transistors for Suppression of Kink and Gate-Induced Drain Leakage Current;IEEE Electron Device Letters;2015-04

5. 3.1:Invited Paper: Oxide Versus LTPS TFTs for Active-Matrix Displays;SID Symposium Digest of Technical Papers;2014-06

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