High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors-Reference-Cited by-同舟云学术

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High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Published:2003-09-15 Issue:Part 1, No. 9A Volume:42 Page:5563-5564
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuan Ta-Ming,Chang Shoou-Jinn,Su Yan-Kuin,Ko Chih-Hsin,Webb James B.,Bardwell Jennifer A.,Liu Ying,Tang Haipeng,Lin Web-Jen,Cherng Ya-Tung,Lan Wen-How

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=9R/a=5563/pdf

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor;ACS Applied Electronic Materials;2024-05-16

2. Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes;Advanced Optical Materials;2024-03-11

3. Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate;Micromachines;2024-01-20

4. Self-Powered GaN-Based MSM Ultraviolet Photodetector With Asymmetrical Interdigitated Structure;IEEE Transactions on Electron Devices;2024-01

5. Light-triggered 2D electron gas in a GaN-based HEMT with sandwiched p-GaN layers;Optics Letters;2023-08-14

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