Scattering Mechanism in Heavily Doped Semiconductors. I. Maxima in Resistivity and Hall Coefficient-Reference-Cited by-同舟云学术

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Scattering Mechanism in Heavily Doped Semiconductors. I. Maxima in Resistivity and Hall Coefficient

Published:1980-05 Issue:5 Volume:48 Page:1566-1575
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Saso Tetsuro¹,Kasuya Tadao¹

Affiliation:

1. Department of Physics, Faculty of Science, University of Tohoku

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.48.1566

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