Transmission Electron Microscopic Observation of Microdefects in Zn+-Implanted GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Implication of rapid thermal annealing-induced cracks on the performance of multiple-quantum-well laser diodes;Applied Optics;2003-05-20
2. Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation;Physica B: Condensed Matter;2001-12
3. Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation;Applied Physics Letters;2001-08-13
4. High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs;Journal of Applied Physics;2000-08-15
5. Transmission Electron Microscopic Study of Intersecting Stacking Faults in ZnSe/GaAs(001) Epilayers and (SiGe)/Si(001) Multilayers;Defect and Diffusion Forum;2000-08
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