Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel-Reference-Cited by-同舟云学术

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Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel

Published:2005-12-08 Issue:12 Volume:44 Page:8305-8308
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Jun-Chin,Hsu Wei-Chou,Lee Ching-Sung,Chen Yeong-Jia,Huang Dong-Hai,Chen Hsin-Hung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures;IEEE Transactions on Electron Devices;2011-12

2. Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor;Sensors and Actuators B: Chemical;2008-01

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