Behavior of Metal-Induced Negative Oxide Charges on the Surface of N-type Silicon Wafers Using Frequency-Dependent AC Surface Photovoltage Measurements-Reference-Cited by-同舟云学术

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Behavior of Metal-Induced Negative Oxide Charges on the Surface of N-type Silicon Wafers Using Frequency-Dependent AC Surface Photovoltage Measurements

Published:2005-06-10 Issue:6A Volume:44 Page:3778-3783
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Hirofumi,Shin Ryuhei,Ikeda Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal-induced negative oxide charge detected by an alternating current surface photovoltage in thermally oxidized Fe-contaminated n-type Si (001) wafers;Thin Solid Films;2012-05

2. Translation from Schottky Barrier to Atomic Bridging-Type Surface Photovoltages in Cr-Aqueous-Solution-Rinsed Si(001) Wafers;Japanese Journal of Applied Physics;2012-05-01

3. Translation from Schottky Barrier to Atomic Bridging-Type Surface Photovoltages in Cr-Aqueous-Solution-Rinsed Si(001) Wafers;Japanese Journal of Applied Physics;2012-04-24

4. Collapse of Cr(OH)3/n-Si Schottky barrier and growth of atomic bridging-type surface photovoltages in Cr-deposited n-type Si(001) wafers;Surface and Interface Analysis;2012-02-07

5. Formation of Au/n-Si(100) Schottky Barrier Using Au Aqueous Solution;Hyomen Kagaku;2012

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