Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions-Reference-Cited by-同舟云学术

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Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions

Published:2005-04-21 Issue:4B Volume:44 Page:2729-2734
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashim Abdul Manaf,Kasai Seiya,Hashizume Tamotsu,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of electrical boundary conditions on profiles of acoustic field and electric potential of shear-horizontal acoustic waves in potassium niobate plates;Ultrasonics;2018-05

2. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications;Sensors;2011-08-18

3. PROPERTIES OF ELECTROMAGNETIC FIELDS AND EFFECTIVE PERMITTIVITY EXCITED BY DRIFTING PLASMA WAVES IN SEMICONDUCTOR-INSULATOR INTERFACE STRUCTURE AND EQUIVALENT TRANSMISSION LINE TECHNIQUE FOR MULTI-LAYERED STRUCTURE;Progress In Electromagnetics Research;2010

4. Harmonic Responses in 2DEG AlGaAs∕GaAs HEMT Devices Due to Plasma Wave Interaction;AIP Conference Proceedings;2010

5. Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction;Superlattices and Microstructures;2008-12

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