Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector-Reference-Cited by-同舟云学术

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Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector

Published:2005-07-26 Issue:7B Volume:44 Page:5696-5699
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Sung Ho,Shin Jae Cheol,Song Jin Dong,Choi Won Jun,Lee Jung Il,Han Haewook,Lee Seung-Woong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors;Journal of Physics D: Applied Physics;2009-05-07

2. Thermal treatment for tuning the lasing wavelength of quantum dot laser diodes;SPIE Proceedings;2007-11-29

3. InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy;Japanese Journal of Applied Physics;2006-10-06

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