Electrical Properties of Metal-Oxide-Containing SiO2Films Formed by Organosiloxane Sol

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Electrical Properties of Metal-Oxide-Containing SiO2Films Formed by Organosiloxane Sol–Gel Precursor

Published:2010-11-22 Issue:11 Volume:49 Page:111503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanuki Kohei,Inokuchi Atsutoshi,Banba Akinori,Suzuki Hirokazu,Koike Tadashi,Adachi Tatsuhiko,Goto Tetsuya,Teramoto Akinobu,Shirai Yasuyuki,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Molecular Templating of Nanoporous Ultralow Dielectric Constant (≈1.5) Organosilicates by Tailoring the Microphase Separation of Triblock Copolymers

2. Protective glass coatings on metallic substrates

3. Antireflection microstructures fabricated upon fluorine-doped SiO_2 films

4. A low‐scattering graded‐index SiO2planar optical waveguide thermally grown on silicon

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