Stress-Induced Off-Current under On- and Off-State Stress Voltages in Low-Temperature n-Channel Polycrystalline Silicon Thin-Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. A new generation-recombination model for device simulation including the Poole-Frenkel effect and phonon-assisted tunnelling
2. Numerical analysis of poly-TFTs under off conditions
3. Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors
4. Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
5. Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependences of Transistor Characteristics of Single-Drain and Lightly-Doped-Drain Poly-Si TFTs;ECS Transactions;2013-06-28
2. Temperature Dependences of $I$– $V$ Characteristics of SD and LDD Poly-Si TFTs;IEEE Electron Device Letters;2012-05
3. Mechanism Analysis of Current–Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy;Japanese Journal of Applied Physics;2012-03-21
4. Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation;Japanese Journal of Applied Physics;2012-03-21
5. Mechanism Analysis of Current–Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy;Japanese Journal of Applied Physics;2012-03-01
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