Air-Stable n-Channel Single-Crystal Field-Effect Transistors-Reference-Cited by-同舟云学术

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Air-Stable n-Channel Single-Crystal Field-Effect Transistors

Published:2010-01-20 Issue:1 Volume:49 Page:01AB05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamagishi Masakazu,Tominari Yoshihiro,Uemura Takafumi,Yamada Koichi,Takeya Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Solution Processed Top-Gate n-Channel Transistors and Complementary Circuits on Plastics Operating in Ambient Conditions

2. General observation of n-type field-effect behaviour in organic semiconductors

3. Field-effect transistors on rubrene single crystals with parylene gate insulator

4. Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals

5. Field-effect transistors on tetracene single crystals

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. n-Type Field-effect Transistors Based on Thieno[3,2-b]thiophene-2,5-dione and the Bis(dicyanomethylene) Derivatives;Chemistry Letters;2011-09-05

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