Enhanced Room-Temperature 1.6 µm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference26 articles.
1. A clarification of the index of refraction of beta‐iron disilicide
2. Indirect optical absorption of single crystalline β-FeSi2
3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
4. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
5. Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi2Films Prepared by Magnetron-Sputtering Deposition
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1. Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy;AIP Advances;2018-10
2. Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange;Journal of Applied Physics;2017-10-21
3. Structural and electrical properties of β-FeSi2polycrystalline films with low electron density;Japanese Journal of Applied Physics;2017-04-06
4. Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization;Scripta Materialia;2016-09
5. Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures;Semiconductors;2015-04
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