Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation-Reference-Cited by-同舟云学术

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Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

Published:2010-04-20 Issue:4 Volume:49 Page:044001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ogi Jun,Ghiass Mohammad Adel,Kodera Tetsuo,Tsuchiya Yoshishige,Uchida Ken,Oda Shunri,Mizuta Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique

2. Coherent Manipulation of Electronic States in a Double Quantum Dot

3. Manipulation of a Single Charge in a Double Quantum Dot

4. Single-electron charging and periodic conductance resonances in GaAs nanostructures

5. Shell Filling and Spin Effects in a Few Electron Quantum Dot

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge sensing and spin-related transport property of p-channel silicon quantum dots;Japanese Journal of Applied Physics;2017-03-14

2. Spin–orbit interaction induced current dip in a single quantum dot coupled to a spin;Physica E: Low-dimensional Systems and Nanostructures;2017-03

3. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor;Applied Physics Letters;2015-11-30

4. Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors;Microelectronic Engineering;2011-08

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