CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio-Reference-Cited by-同舟云学术

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CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

Published:2010-04-20 Issue:4 Volume:49 Page:04DM04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizunuma Kotaro,Ikeda Shoji,Yamamoto Hiroyuki,Gan Hua Dong,Miura Katsuya,Hasegawa Haruhiro,Hayakawa Jun,Ito Kenchi,Matsukura Fumihiro,Ohno Hideo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. 2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

2. TMR-Based Logic-in-Memory Circuit for Low-Power VLSI

3. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

4. Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

5. Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm;Japanese Journal of Applied Physics;2017-07-24

2. Computing with spins and magnets;MRS Bulletin;2014-08

3. Magnetic Properties and Magnetic Domain Structures Evolution Modulated by CoFeB Layer in [Pd/Co]/CoFeB/MgO/CoFeB/[Co/Pd] Perpendicular MTJ Films;IEEE Transactions on Magnetics;2012-11

4. Enhancement of perpendicular magnetic anisotropy thanks to Pt insertions in synthetic antiferromagnets;Applied Physics Letters;2012-08-13

5. Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers;Applied Physics Letters;2012-04-02

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