Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Emission Characteristics of Ion-Implanted Silicon Emitter Tips
2. Control of emission characteristics of silicon field emitter arrays by an ion implantation technique
3. Emission current saturation of the p-type silicon gated field emitter array
4. Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface
5. Modification of field emitter array tip shape by focused ion-beam irradiation
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1. Field-emission Characteristics of a Focused-Ion-Beam-Sharpened P-Type Silicon Single Emitter;IEICE Transactions on Electronics;2015
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