Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor-Reference-Cited by-同舟云学术

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Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

Published:2010-03-23 Issue:3 Volume:49 Page:034201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Tsu,Kao Hsuan-ling,Chen Y. J.,Chin Albert

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Low noise RF MOSFETs on flexible plastic substrates

2. Electrical-stress effects and device modeling of 0.18-/spl mu/m RF MOSFETs

3. High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- $\mu\hbox{m}$ BiCMOS Process for RF-Power Applications

4. Small-signal and power evaluation of novel BiCMOS-compatible short-channel LDMOS technology

5. RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design

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