Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Mixing at 50GHz using a single-walled carbon nanotube transistor
2. Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
3. High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes
4. High-mobility carbon-nanotube thin-film transistors on a polymeric substrate
5. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy;Japanese Journal of Applied Physics;2012-04-20
2. Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy;Japanese Journal of Applied Physics;2012-04-01
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