Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
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1. Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation;Semiconductor Science and Technology;2018-02-14
2. Tight-binding analysis of current oscillation in nanoscale In0.53Ga0.47As Schottky MOSFET;Journal of Physics D: Applied Physics;2013-10-16
3. Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET;Chinese Physics B;2013-09
4. Performance assessment of nanoscale Schottky MOSFET as resonant tunnelling device: Non-equilibrium Green’s function formalism;Pramana;2013-08-24
5. Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study;J NANOSTRUCT;2012
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