Annealing Temperature Dependence of Crystallization Process of SiGeAu Thin Film
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
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1. High Dimensionless Figure of Merit ZT = 1.38 Achieved in p-Type Si–Ge–Au–B Thin Film;MATERIALS TRANSACTIONS;2020-05-01
2. Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film;Japanese Journal of Applied Physics;2018-02-09
3. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition;Journal of Nanomaterials;2016
4. Effect of Percolation on Structural and Electrical Properties of MIC Processed SiGe/Al Multilayers;Journal of Electronic Materials;2015-11-09
5. Influence of annealing temperature and Au concentration on the electrical properties of multilayered a-Ge/Au films;Journal of Non-Crystalline Solids;2012-09
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