MBE-Related Surface Segregation of Dopant Atoms in Silicon-Reference-Cited by-同舟云学术

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MBE-Related Surface Segregation of Dopant Atoms in Silicon

Published:1988-11-20 Issue:Part 2, No. 11 Volume:27 Page:L2013-L2014
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakagawa Kiyokazu,Miyao Masanobu,Shiraki Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures;Materials Science and Engineering: B;2002-02

2. Surface morphology of Ga adsorbed Si( 113 ) surface;Surface Science;2001-11

3. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer;Applied Physics Letters;2001-03-12

4. RHEED-AES observation of In desorption on a single-domain Si(001)-(1×2) surface;Surface Science;1998-07

5. Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation;MRS Proceedings;1998

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