Ridge Waveguide DFB Laser Operating at λ=1.5 µ m, Fabricated in a Single Step Epitaxial Growth-Reference-Cited by-同舟云学术

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Ridge Waveguide DFB Laser Operating at λ=1.5 µ m, Fabricated in a Single Step Epitaxial Growth

Published:1988-12-20 Issue:Part 2, No. 12 Volume:27 Page:L2354-L2356
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Binsma J. J. M.,Tiemeyer L. F.,Zantvoort H. A. C. M. van,Baele I.,Dongen T. van,Hofstad G. L. A. van der

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of 1.3 µm ridge waveguide distributed feedback lasers fabricated by one-step metalorganic chemical vapour deposition;IEE Proceedings - Optoelectronics;1994-10-01

2. Liquid phase epitaxial growth and characterization of thin In1−xGaxAsyP1–y layers lattice-matched to InP;Crystal Research and Technology;1994

3. Self-Aligned Ridge-Waveguide DFB Lasers Emitting at 1.55 µm: Ridge-Width Dependence;Japanese Journal of Applied Physics;1990-10-20

4. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06

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