In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Carrier Recombination Processes in GaAs/AlAs Multiple Quantum Wells Using Piezoelectric Photothermal and Surface Photovoltage Techniques;Japanese Journal of Applied Physics;2009-07-21
2. Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices;Japanese Journal of Applied Physics;2008-01-18
3. Investigation of Optical Absorption Spectra of GaAs/AlAs Multiple Quantum Wells Fabricated on a GaAs Substrate Using Surface Photovoltage and Piezoelectric Photothermal Techniques;Japanese Journal of Applied Physics;2007-10-09
4. Electronic structure and vertical transport in random dimerGaAs−AlxGa1−xAssuperlattices;Physical Review B;2001-04-05
5. Exciton resonance induced dips in photocurrent spectra of weakly coupled GaAsAlAs superlattice p–i–n diodes: barrier thickness dependence;Physica E: Low-dimensional Systems and Nanostructures;1999-11
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