Saturation of Optical Degradation in a-Si:H Films with Different Morphologies-Reference-Cited by-同舟云学术

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Saturation of Optical Degradation in a-Si:H Films with Different Morphologies

Published:1988-12-20 Issue:Part 2, No. 12 Volume:27 Page:L2245-L2247
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohagi Hideki,Nakata Jun-ichi,Miyanishi Atsushi,Imao Shozo,Jeong ManU,Shirafuji Junji,Fujibayashi Keiji,Inuishi Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Staebler–Wronski effect and the thermal equilibration of defect and free carrier concentrations;Journal of Applied Physics;1996-03-15

2. Dependence of steady‐state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range;Applied Physics Letters;1993-04-12

3. Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range;MRS Proceedings;1993-01-01

4. Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity;Japanese Journal of Applied Physics;1992-11-15

5. Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H;Japanese Journal of Applied Physics;1992-10-15

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