Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process-Reference-Cited by-同舟云学术

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Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process

Published:2004-03-10 Issue:3 Volume:43 Page:897-900
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ahn Jeong-Ah,Kim Ohyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LTPS TFTs with an Amorphous Silicon Buffer Layer and Source/Drain Extension;Electronics;2020-12-28

2. A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design;Coatings;2019-08-13

3. A novel self-aligned poly-Si TFT with field-induced drain formed by the damascene Process;IEEE Electron Device Letters;2005-04

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