Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/43/i=1A/a=L103/pdf
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1. Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems;Journal of the Korean Physical Society;2018-07
2. Ga-migration on a Ga-rich and As-stabilized surfaces: Ga-droplet and GaAs- nanostructure formation;Materials Science in Semiconductor Processing;2017-01
3. Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching;Nanotechnology;2013-06-20
4. Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth;Applied Physics Letters;2012-09-10
5. Effect of the surface integral in the torque equation of the electromagnetic angular momentum on the Faraday rotation;Optics Communications;2011-09
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