Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy

Published:2004-03-10 Issue:3 Volume:43 Page:958-965
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugiyama Mutsumi,Nosaka Taiki,Suzuki Tomonori,Koida Takashi,Nakajima Kiyomi,Aoyama Toyomi,Sumiya Masatomo,Chikyow Toyohiro,Uedono Akira,Chichibu Shigefusa F.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and Their Strain Analysis;Advanced Electronic Materials;2016-01-13

2. Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams;Journal of Applied Physics;2012-01

3. Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates;Journal of Crystal Growth;2007-01

4. 3C-SiC/Si template growth and atomic layer epitaxy of cubic GaN by RF-MBE;Journal of Crystal Growth;2005-02

5. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques;Applied Physics Letters;2005-01-10

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