Efficient Improvement of Hot-Carrier-Induced Device's Degradation for Sub-0.1 µm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
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Published:2004-04-27
Issue:4B
Volume:43
Page:1737-1741
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Lin Jung-Chun,Yeh Wen-Kuan,Lei Tan-Fu
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering