Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
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Published:2004-03-10
Issue:3
Volume:43
Page:918-924
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Tada Kenshi,Matsuoka Toshimasa,Taniguchi Kenji,Maeda Kazuhiro,Sakai Tamotsu,Kubota Yasushi,Imai Shigeki
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering