Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory
-
Published:2004-04-27
Issue:4B
Volume:43
Page:1704-1708
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Takaura Norikatsu,Takemura Riichiro,Matsuoka Hideyuki,Nagai Ryo,Yamada Satoru,Asakura Hisao,Kimura Shin'ichiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering