Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO2Directly Grown on Si(111)-Reference-Cited by-同舟云学术

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Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO2Directly Grown on Si(111)

Published:2004-04-27 Issue:4B Volume:43 Page:1795-1798
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsushita Daisuke,Nishikawa Yukie,Satou Nobutaka,Yoshiki Masahiko,Schimizu Tatsuo,Yamaguchi Takeshi,Satake Hideki,Fukushima Noburu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-metal oxides coupling for CH4-CO2 transformation into syngas and/or hydrocarbons, oxygenates;Catalysis Today;2021-06

2. CO2 decomposition in a packed DBD plasma reactor: influence of packing materials;RSC Advances;2016

3. Dielectric properties and ac conductivity of TlSbTe2 thin films;Materials Science in Semiconductor Processing;2015-10

4. Chemical synthesis, structural characterization and electrical studies of nanoceria for CMOS applications;Journal of Electroceramics;2014-04-17

5. Atomic-Scale Structure Investigation of CeO₂/YSZ/Si Hetero-Interface by High Resolution Analytical Electron Microscope;Bunseki kagaku;2006

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