Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers-Reference-Cited by-同舟云学术

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Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Published:2004-04-27 Issue:4B Volume:43 Page:1947-1950
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yu Hsin-Chieh,Chang Shoou-Jinn,Su Yan-Kuin,Sung Chia-Pin,Yang Hong-Pin,Huang Chun-Yuan,Lin Yu-Wei,Wang Jin-Mei,Lai Fang-I,Kuo Hao-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.3-$\mu$m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process;IEEE Photonics Technology Letters;2011-01

2. Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach;Applied Physics B;2009-11-07

3. Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE;SPIE Proceedings;2007-02-08

4. 1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE;IEEE Photonics Technology Letters;2006-01

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