Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process-Reference-Cited by-同舟云学术

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Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process

Published:2004-12-09 Issue:12 Volume:43 Page:8007-8012
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Joo-Wan,Kim Jun Ki,Kim Soo-Hyun,Sun Ho-Jung,Yang Hong-Seon,Sohn Hyun Chul,Kim Jin Woong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=12R/a=8007/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Tungsten Nanolayer Coating on Si Electrode in Lithium-ion Battery;Nanoscale Research Letters;2018-02-21

2. Improved electrochemical behavior of W-coated SiO–graphite composite anode in lithium-ion secondary battery;Journal of Applied Electrochemistry;2015-03-05

3. Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law;Physical Review B;2010-08-19

4. Micro-indentation of metallic photonic crystals: experimental and numerical investigations;International Journal of Mechanics and Materials in Design;2008-07-15

5. Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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