Characterization and Comparison of Strained Si1-yCyMetal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
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Published:2004-04-27
Issue:4B
Volume:43
Page:1882-1885
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Watahiki Tatsuro,Ishihara Hanae,Abe Katsuya,Yamada Akira,Konagai Makoto
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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