High-Speed Semiconductor Light Emitters Based on Quantum-Confined Field Effect: Developed Devices and Inclusion of Quantum Microcavities-Reference-Cited by-同舟云学术

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High-Speed Semiconductor Light Emitters Based on Quantum-Confined Field Effect: Developed Devices and Inclusion of Quantum Microcavities

Published:1992-09-15 Issue:Part 1, No. 9A Volume:31 Page:2764-2785
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamanishi Masamichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs;SPIE Proceedings;2001-05-18

2. Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures;Semiconductor Science and Technology;1999-07-26

3. Sub-Poissonian photon-states generated by light-emitting-diodes: Coulomb blockade of pump events and Stark-effect blockade of emission events;Materials Science and Engineering: B;1997-08

4. Electron- and photon-manipulation in microcavities and practical applications;Superlattices and Microstructures;1997-07

5. Sub-Poissonian Photon-State Generation by Stark-Effect Blockade of Emissions in a Semiconductor Diode Driven by a Constant-Voltage Source;Physical Review Letters;1996-04-29

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