Electronic Properties of GaAs Thin Film Deposited on Silica Substrate by RF Sputtering-Reference-Cited by-同舟云学术

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Electronic Properties of GaAs Thin Film Deposited on Silica Substrate by RF Sputtering

Published:1992-03-15 Issue:Part 1, No. 3 Volume:31 Page:880-881
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuji Seiji,Iri Eiji,Takakura Hideyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers;Scientific Reports;2021-05-12

2. Solid-phase crystallization of gallium arsenide thin films on insulators;Materials Science in Semiconductor Processing;2021-03

3. Improving photoresponsivity in GaAs film grown on Al-induced-crystallized Ge on an insulator;AIP Advances;2020-01-01

4. High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer;Applied Physics Letters;2019-04-08

5. DECOMPOSITION OF C60 MOLECULES ON Si(100)(2 × 1) SURFACE;International Journal of Modern Physics C;2000-07

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