The Band Structure Parameters Determination of the Quaternary Semimagnetic Semiconductor Alloy Hg1-x-yCdxMnyTe
Author:
Affiliation:
1. Institute for Solid State Physics, University of Tokyo
2. Department of Material Physics, Faculty of Engineering Sciences, Osaka University
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.55.274
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Band gap and optical properties of the CdxHg1 − x − y ZnyTe alloys in ultraviolet and visible spectral regions;Semiconductors;2006-03
2. Investigation of the physical properties of multicomponent solid solutions Hg1–x–y–zAxByCzTe;Semiconductor physics, quantum electronics and optoelectronics;2005-05-31
3. Growing Cd1-x-yMnyHgxTe single crystals and their optoelectronic properties;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-06-16
4. Barrier height and current passage mechanisms in Schottky diodes based in Mn x Hg 1-x Te;SPIE Proceedings;2001-02-22
5. Exchange interaction effect on oscillatory magnetoresistance in n-type Hg1-x-yCdxMnyTe near semimetal-semiconductor transition;Semiconductor Science and Technology;2000-11-15
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