Electrical Propertiesof Quench-Deposited Amorphous SnTe Films-Reference-Cited by-同舟云学术

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Electrical Propertiesof Quench-Deposited Amorphous SnTe Films

Published:1991-11-15 Issue:11 Volume:60 Page:3797-3801
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Kondo Shin-ichi¹,Tatsukawa Toshiaki¹,Saito Tadaaki¹,Tsubokawa Katsuji²,Fukui Kazutoshi³,Mekata Mamoru¹

Affiliation:

1. Department of Applied Physics, Faculty of Engineering, Fukui University, Fukui 910

2. Experimental Laboratory for Low Temperature Physics, Faculty of Engineering, Fukui University, Fukui 910

3. Department of Electrical and Electronics Engineering, Faculty of Engineering, Fukui University, Fukui 910

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.60.3797

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening Switching Materials with Low Leakage Current and High Thermal Stability for Neuromorphic Computing;Advanced Electronic Materials;2022-04-03

2. Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn;Advanced Functional Materials;2020-09-28

3. Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials;Journal of Materials Chemistry C;2020

4. Glass formation in narrow band-gap SnTe-based chalcogenide systems;Materials Letters;2017-05

5. Core Absorption Spectra of SnTe and PbTe in Crystalline and Amorphous Phases;Journal of the Physical Society of Japan;1992-06

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