Spin-Orbit Interaction in Two Dimensional Systems in InAsn-Inversion Layers
Author:
Affiliation:
1. Gakushuin Women's Junior College
2. Department of Physics, Gakushuin University
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.56.1293
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11
2. Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependence;Journal of Crystal Growth;2007-04
3. Negative and positive persistent photoconductivity effects in AlxGa1−xAsySb1−y/InAs quantum wells;Journal of Crystal Growth;2007-04
4. Magneto-quantum transport in AlxGa1–xAsySb1–y/InAs quantum wells;physica status solidi (c);2007-02
5. Weak localization and spin splitting in inversion layers onp-type InAs;Physical Review B;2004-12-21
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