Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. GaAs FET's with a flicker-noise corner below 1 MHz
2. An investigation of low-frequency noise in complementary SiGe HBTs
3. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
4. Presence of mobility-fluctuation noise identified in silicon P+NP transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures;Microelectronics Journal;2024-02
2. Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications;Microelectronics Reliability;2014-09
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