Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI
2. NiSi salicide technology for scaled CMOS
3. Epitaxial CoSi2films on Si(100) by solid‐phase reaction
4. Application of self-aligned CoSi/sub 2/ interconnection in submicrometer CMOS transistors
5. Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
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