Luminescence Mechanism of SiOxFilms Grown by Atmospheric-Pressure Halide Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Luminescence Mechanism of SiOxFilms Grown by Atmospheric-Pressure Halide Chemical Vapor Deposition

Published:2007-11-06 Issue:11 Volume:46 Page:7542-7544
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Yu-Hsiang,Li Zhen-Yu,Chen Meng-Chu,Ku Chien-Te,Chen Ying-Ru,Uen Wu-Yih,Lin Chia-Hung,Lan Shan-Ming,Yang Tsun-Neng,Shen Ji-Lin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. High-efficiency top-emitting microcavity LEDs on GaAs and GaAs/Si substrates

2. Visible electroluminescence from porous silicon

3. Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation

4. High quantum efficiency for a porous silicon light emitting diode under pulsed operation

5. Stable electroluminescence from reverse biased n‐type porous silicon–aluminum Schottky junction device

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique;Thin Solid Films;2009-11

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