Design and Optical Characterization of Passive Pixel with Sensitivity-Improved InGaAs/InP Phototransistors Considering Light-Dependent Shunt Resistance for Near Infrared Imaging Applications-Reference-Cited by-同舟云学术

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Design and Optical Characterization of Passive Pixel with Sensitivity-Improved InGaAs/InP Phototransistors Considering Light-Dependent Shunt Resistance for Near Infrared Imaging Applications

Published:2007-09-20 Issue:9B Volume:46 Page:6222-6226
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jo Young Chang,Song Hong Joo,Choi Yeon Shik,Kim Hoon,Park Hyo Derk,Kwon Young Se,Choi Pyong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Millimeter-wave generation and digital modulation in an InGaAs-InP heterojunction phototransistor: model and experimental characterization of dynamics and noise

2. Effectiveness of metallic mirror for promoting the photoresponse of InGaAs PIN photodiode

3. High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes

4. Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using dc base bias

5. Photoresponse Nonlinearity of a Uni-Traveling-Carrier Photodiode and Its Application to Optoelectronic Millimeter-Wave Mixing in 60 GHz Band

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain-Enhanced InGaAs–InP Heterojunction Phototransistor With Zn-Doped Mesa Sidewall;IEEE Photonics Technology Letters;2009-09

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